28nm High-K Metal Gate RF CMOS TCAD Calibration
| Metadata Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | Niu, Guofu | en_US |
| dc.contributor.author | Zhang, Jiabi | en_US |
| dc.date.accessioned | 2015-12-10T16:59:16Z | |
| dc.date.available | 2015-12-10T16:59:16Z | |
| dc.date.issued | 2015-12-10 | |
| dc.identifier.uri | http://hdl.handle.net/10415/4936 | |
| dc.description.abstract | States of art of 28nm MOSFET structure is studied using the calibrated simulation deck, RF noise is simulated and compared with measurements. DC characteristics is firstly calibrated by adjusting doping profiles and other physical models include mobility and energy relaxation time model parameters. For DC calibration, body effect is focused on. DIBL(Drain Induced Barrier Lowering)and SS(Subthreshold slope) are fitted by fitting simulation IDS-VGS curves and IDS-VDS curves to measurement data. | en_US |
| dc.rights | EMBARGO_GLOBAL | en_US |
| dc.subject | Electrical Engineering | en_US |
| dc.title | 28nm High-K Metal Gate RF CMOS TCAD Calibration | en_US |
| dc.type | Master's Thesis | en_US |
| dc.embargo.length | MONTHS_WITHHELD:51 | en_US |
| dc.embargo.status | EMBARGOED | en_US |
| dc.embargo.enddate | 2020-03-04 | en_US |
| dc.contributor.committee | Dai, Fa | en_US |